LCR-T4 Component Tester (ESR Meter)

  • BrandKuongshun

Description

With this device, you'll be able to automatically to detect NPN and PNP transistors, n-channel and p-channel MOSFETs, diodes, thyristors, resistors, capacitors and many other components. It is also possible to measure certain characteristics of these devices as, for example, the current amplification factor of BJT or the gate threshold voltage of a MOSFET and much more.

Features

  • Automatic detection of NPN and PNP transistors, n-channel and p-channel MOSFETs, diodes (including double diode), thyristors, resistor and capacitor and other components
  • Automatic testing of the pins of a component, and displaying on the LCD
  • Detection of the transistor, MOSFET protection diode amplification coefficient and the base to determine the emitter transistor forward biased voltage
  • Measurement of the gate threshold voltage and the gate capacitance of the MOSFET
  • Simultaneous measurement of the of two resistors while displaying resistor symbol
  • Measurement of a single diode reverse capacitance
  • Measurements of capacitance, resolution 1 pF
  • Identification of Darlington transistors via the base-emitter threshold voltage and current amplification factor
  • Measurement of the bipolar transistor current amplification factor and the base-emitter threshold voltage
  • 2x16 Characters LCD-Display (12864 LCD with green backlight)

Test ranges

  • Resistance: Max. 50 MΩ, resolution 0.1 Ω
  • Capacitance: 25 pF – 100000 µF
  • Inductance: 0.01 mH – 20 H

Specifications

  • One-button operation
  • Automatic shutdown for improved battery life
  • Shutdown current less than 20 nA
Product form

With this device, you'll be able to automatically to detect NPN and PNP transistors, n-channel and p-channel MOSFETs, diodes, thyristors,... Read more

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€ 19,95 incl. VAT
Members € 17,96

      Details

      SKU: 18706
      EAN: 018706

      Description

      With this device, you'll be able to automatically to detect NPN and PNP transistors, n-channel and p-channel MOSFETs, diodes, thyristors, resistors, capacitors and many other components. It is also possible to measure certain characteristics of these devices as, for example, the current amplification factor of BJT or the gate threshold voltage of a MOSFET and much more.

      Features

      • Automatic detection of NPN and PNP transistors, n-channel and p-channel MOSFETs, diodes (including double diode), thyristors, resistor and capacitor and other components
      • Automatic testing of the pins of a component, and displaying on the LCD
      • Detection of the transistor, MOSFET protection diode amplification coefficient and the base to determine the emitter transistor forward biased voltage
      • Measurement of the gate threshold voltage and the gate capacitance of the MOSFET
      • Simultaneous measurement of the of two resistors while displaying resistor symbol
      • Measurement of a single diode reverse capacitance
      • Measurements of capacitance, resolution 1 pF
      • Identification of Darlington transistors via the base-emitter threshold voltage and current amplification factor
      • Measurement of the bipolar transistor current amplification factor and the base-emitter threshold voltage
      • 2x16 Characters LCD-Display (12864 LCD with green backlight)

      Test ranges

      • Resistance: Max. 50 MΩ, resolution 0.1 Ω
      • Capacitance: 25 pF – 100000 µF
      • Inductance: 0.01 mH – 20 H

      Specifications

      • One-button operation
      • Automatic shutdown for improved battery life
      • Shutdown current less than 20 nA

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